发明名称 COMBINED ERROR MEASURING MARK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a combined error measuring mark for performing a correct positioning in a metal photolithographic process. <P>SOLUTION: A ground reference mark 110 is formed by forming a ground reference mark hole 111 at a predetermined density in an interlayer film 132, depositing tungsten inside the ground reference mark hole 111 and on the interlayer film 132, and creating a recess by erosion produced when chemical mechanical polishing is performed on the tungsten present on the surface of the interlayer film 132. A resist reference mark 120 is formed in a rectangular shape of dimensions different from those of the ground reference mark 110 on a resist film 134 on the ground reference mark 110. The position of an edge 133a in the recess of an aluminum film 133 coincides with that of an edge 110a in the ground reference mark 110, because the ground reference mark 110 is formed by the recess of the erosion. Therefore, a combined error can be correctly detected by measuring the positions of the edge 133a and the resist reference mark 120. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007049074(A) 申请公布日期 2007.02.22
申请号 JP20050234390 申请日期 2005.08.12
申请人 OKI ELECTRIC IND CO LTD 发明人 AOYAMA RYOICHI
分类号 H01L21/027;G03F7/20;H01L21/3205;H01L21/66 主分类号 H01L21/027
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