| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which defective products are reduced by removing plating burrs occurred in etching processing. <P>SOLUTION: The method for manufacturing a semiconductor device includes: a first step for forming plating masks 13 and 14 corresponding to an internal connection terminal 17 and an external connection terminal 22; a second step for projecting the internal connection terminal 17 by performing etching processing of a predetermined depth using the plating mask 13 on the surface as a resist mask; a third step for mounting a semiconductor element 18 and connecting its electrode pads 30, respectively, with corresponding internal connection terminals 17; a fourth step for resin-sealing the semiconductor element 18 and the internal connection terminals 17; and a fifth step for projecting the external connection terminal 22 by performing etching processing on the backside, wherein plating burrs 26 at the internal connection terminal 17 and the external connection terminal 22 are removed after second step and fifth step, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
