| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment which can lower a deposit speed of a thin film formed on a substrate while being simple in constitution, and can form a thinner film. SOLUTION: The semiconductor manufacturing equipment comprises a treatment chamber 201, a susceptor 217 for supporting a wafer 200 in the treatment chamber 201, and a cylindrical electrode 215 and a cylindrical magnetic field forming means 216 attached to the periphery of the treatment chamber 201 for generating plasma 224. A grid 100 is provided downward of the attachment position of the cylindrical electrode 215 in the treatment chamber 201 so as to cover the wafer 200 supported by the susceptor 217. The grid 100 is constituted of an insulator which is charged at a negative voltage without being applied with a bias voltage. COPYRIGHT: (C)2007,JPO&INPIT
|
