| 摘要 |
A method for forming a capacitor of a semiconductor device ensures charging capacity and improves leakage current characteristic. In the capacitor forming method, a semiconductor substrate formed with a storage node contact is prepared first. Next, a storage electrode is formed such that the storage electrode is connected to the storage node contact. Also, a dielectric film comprised of a composite dielectric of a SrTiO3 film and an anti-crystallization film is formed on the storage electrode. Finally, a plate electrode is formed on the dielectric film.
|
