| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device of high throughput. <P>SOLUTION: This device includes a memory cell array 501 where NAND type flash memory cells 501 are arranged, the memory cells belonging to the same row are interconnected through a common word lines WL, the memory cells belonging to the same column are interconnected through a common bit line, and the data of the same row is divided to be read, a register 502 for storing and reading the divided data of the memory cell array by divided units, and a memory 503 for storing output data from the register by divided units. The method for operating the nonvolatile semiconductor memory device includes the step of reading the data of the first divided unit stored in the register 502, the step of transferring the data to store it in the memory 503, and the step of simultaneously reading the data of the second divided unit different from the data of the first divided unit of the memory cell to store it in the register 502. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
