发明名称 MANUFACTURING METHOD OF MICRO ELECTROMACHINERY TYPE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method to reduce cost by forming a micro structure and a semiconductor element to control the micro structure on the same substrate in mass-production of a micro machine having micro structure. SOLUTION: Removal of a mask in a region to form the semiconductor element and removal of a sacrifice layer and the mask in the region to form the micro structure are carried out in the same process by forming the sacrifice layer by using a mask material to carry out pattern formation of a film in manufacturing the micro machine. More concretely, the manufacturing method of the micro electromachinery type device to simultaneously carry out the removal of the mask and the sacrifice layer by selectively forming the sacrifice layer 10 on the insulating substrate, forming a semiconductor layer 104 by covering the sacrifice layer, forming the mask 105 on the semiconductor layer and etching the semiconductor layer by using the mask is provided. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007044864(A) 申请公布日期 2007.02.22
申请号 JP20060188723 申请日期 2006.07.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TATEISHI FUMINORI
分类号 B81C1/00;H01L21/28;H01L21/3205;H01L23/52 主分类号 B81C1/00
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