NON-VOLATILE MEMORY DEVICE

摘要

An electronic memory device is presented. The device comprises at least one basic unit, which is configured as a memory cell for storing at least one bit of information. The basic unit comprises a vacuum cavity for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity, an anode electrode which are kept under controllable voltage conditions, and at least one floating gate electrode accommodated in a path of said free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information.