III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A III-group nitride semiconductor LED is provided to improve a current density of an n-side electrode region of a semiconductor LED having an electrode structure of a vertical type by forming a sub metal electrode. A substrate(10) has a first surface and a second surface confronting the first surface wherein a groove(91) is formed from the first surface to the second surface. A buffer layer(20) is grown on the first surface of the substrate having the groove. An n-type III-group nitride semiconductor layer(30) is epitaxially grown on the buffer layer. An active layer(40) generates light by recombination of electrons and holes, epitaxially grown on the n-type III-group nitride semiconductor layer. A plurality of nitride semiconductor layers include a p-type III-group nitride semiconductor layer(50) epitaxially grown on the active layer. A p-side electrode(60) and a p-side bonding pad(70) are formed on the p-type III-group nitride semiconductor layer. The plurality of nitride semiconductor layers include an opening(90) formed by the groove formed in the first surface of the substrate. A first n-side electrode(81) is formed in the n-type III-group nitride semiconductor layer through the opening. A second n-side electrode(82) is formed in the n-type III-group nitride semiconductor layer through the groove exposed by polishing of the second surface of the substrate. The first n-side electrode electrically comes in contact with the second n-side electrode, and a sub metal electrode(80) is formed on the outer walls of the first and the second n-side electrodes by an electroplating method.