| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing the number of manufacture processes, shortening the manufacture processing time, remarkably reducing the manufacture cost, and improving the manufacturing yield. SOLUTION: A TFT substrate is provided with a substrate 10, a gate electrode 12a arranged on the substrate 10, gate wiring, an electrode removing pad 12b connected to gate wiring, a gate insulating film 13, an i-type silicon layer 14 arranged on the gate insulating film 13, an n-type silicon layer 15 disposed on the i-type silicon layer 14 and is detached by a channel, source/drain electrodes 16a and 16b, source/drain wiring, and a transparent electrode formed of a transparent conductive film connected to the source/drain electrodes 16a and 16b. The gate insulating film 13 exists only on the lower part of the i-type silicon layer 14, and the respective layers can be patterned by three masks by using such a constitution. COPYRIGHT: (C)2007,JPO&INPIT |
