| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor and its manufacturing method with which an MIM type capacitive element excellent in yield ratio and reliability is equipped. SOLUTION: The semiconductor device 1 includes an interlayer dielectric film 10, interconnect lines 12a-12c, an interlayer dielectric film 20, and a capacitive element 30. On the interlayer dielectric film 10 and the interconnect lines 12a-12c, the interlayer dielectric film 20 is provided through a diffusion prevention film 40. On the interlayer dielectric film 20, the capacitive element 30 is provided. The capacitive element 30 is MIM type capacitive element comprising a lower electrode 32 provided on the interlayer dielectric film 20, a capacitive insulating film 34 provided on the lower electrode 32, and an upper electrode 36 provided on the capacitive insulating film 34. The interface S1 between the interlayer dielectric film 20 and the capacitive element 30 is roughly flat, and the lower face S2 of the interlayer dielectric film 20 has irregularity in the position opposed to the capacitive insulating film 34. COPYRIGHT: (C)2007,JPO&INPIT |
