| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method of manufacturing a MOSFET device. SOLUTION: Schottky barrier contacts (301, 302) are used for source and/or drain connection within the context of a MOSFET device structure, to eliminate a requirement for halo/pocket implant and shallow source/drain extension to control short channel effects. Additionally, the necessity of a parasitic bipolar gain associated with MOSFET manufacturing is unconditionall eliminated, a manufacturing cost is reduced, a device performance parameter is strictly controlled, and superior device characteristics are provided as compared to prior art. COPYRIGHT: (C)2007,JPO&INPIT |
