发明名称 |
HYBRID-ORIENTATION TECHNOLOGY BURIED n-WELL DESIGN |
摘要 |
A semiconductor structure is provided that includes a hybrid orientated substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of the coplanar surfaces has bulk-like semiconductor properties and the other coplanar surface has semiconductor-on-insulator (SOI) properties. In accordance with the present invention, the substrate includes a new well design that provides a large capacitance from a retrograde well region of the second conductivity type to the substrate thereby providing noise decoupling with a low number of well contacts. The present invention also provides a method of fabricating such a semiconductor structure.
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申请公布号 |
US2007040218(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20050161861 |
申请日期 |
2005.08.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HAENSCH WILFRIED E.;NOWAK EDWARD J. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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