| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device and a method for processing plasma, which easily conduct a desorption of a substrate after it is held and processed with an electrostatic absorption. <P>SOLUTION: The plasma processing device comprises: a processing chamber 101 for plasma processing the substrate 103 to be processed; plasma generating means 105 to 108 for generating the plasma in the processing chamber 101; a wafer stage 102 having an electrostatic chuck for holding the substrate 103 to be processed provided within the processing chamber 101; a detecting means 114 of a leak current value flowing in a circuit formed by a power supply 112 for the elctrostatic absorption, the electrostatic chuck 102, the substrate 103, the plasma 109, an earth line 113; and a means 115 for controlling an applying voltage, so as to set an absorption condition by the current value to reach the set current value. <P>COPYRIGHT: (C)2007,JPO&INPIT |
