发明名称 SWITCH ELEMENT, MEMORY DEVICE, AND MAGNETORESISTANCE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a switch element, magnetoregistance effect element, and memory device using carbon nanotubes, the deterioration of whose characteristics due to their miniaturization is prevented by a simple structure. SOLUTION: A substrate, a plurality of carbon nanotubes set on the substrate in a atanding way, magnetic substance particles arranged at the tip of each carbon nanotube, and a plurality of conductive layers formed between the tip end of each carbon nanotube and the substrate are prepared and structured, a difference in potential is caused between the conductive layers to bring into contact those magnetic substance effect particles arranged at the carbon nanotubes or at the tip of the carbon nanotubes, and current is applied between the carbon nanotubes with the carbon nanotubes or the magnetic substance effect particles in contact to perform a switch action by separating the nanotubes. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007049084(A) 申请公布日期 2007.02.22
申请号 JP20050234515 申请日期 2005.08.12
申请人 TOSHIBA CORP 发明人 YAMAUCHI TAKASHI;TANAKA CHIKA;SUGIYAMA HIDEYUKI;KINOSHITA ATSUHIRO;KOGA JUNJI;MOTOI YUICHI;NAKANO YOSHIHIKO;SUENAGA SEIICHI
分类号 H01L29/66;G11C13/00;H01L21/8246;H01L27/105;H01L29/06;H01L43/08 主分类号 H01L29/66
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