| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of ion introduction onto a semiconductor formed with a resist that causes a factor to deteriorate the properties of the semiconductor because a reaction between ions and a component of the resist generates a gas (dissociated gas) resulting in that the component of the dissociated gas is introduced into the semiconductor. SOLUTION: The dissociated gas to be generated from an organic film is treated. Particularly, the dissociated gas is treated before the ion introduction is performed. As a method of performing such a treatment, the ion introduction is performed by dividing ion introduction processing itself into a plurality of times. The dissociated gas is generated in a maximum quantity just after the ion introduction is started. For this reason, it is possible to decrease an introduction of a component of the dissociated gas into the semiconductor or prevent the component of the dissociated gas from being introduced into the semiconductor, when ion introduction processing is divided into a plurality of times and, in each of the thus-divided ion introduction processing after a second and succeeding time thereof, the ion is introduced while removing the dissociated gas from a treatment chamber by performing evacuation. COPYRIGHT: (C)2007,JPO&INPIT |
