发明名称 Vacuum processing chamber and method of processing a semiconductor work piece
摘要 A vacuum processing chamber and method of using a vacuum processing chamber are described and which includes a chamber defined by a chamber body, and wherein the chamber body defines an internal cavity; first and second electrodes are mounted in the internal cavity as defined by the chamber body; an RF generator is provided, and which produces single or multiple frequencies and which is electrically coupled to at least one of the first or second electrodes, and which are operable, when energized, to produce a plasma within the internal cavity of the chamber body; and an adjustable component borne by the chamber body, and which is fabricated, at least in part, from a dielectric material, and which selectively adjusts the equivalent dielectric constant which exists between the chamber body and the first electrode.
申请公布号 US2007039165(A1) 申请公布日期 2007.02.22
申请号 US20060440738 申请日期 2006.05.24
申请人 ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA 发明人 XIA YAOMIN
分类号 H01L39/24 主分类号 H01L39/24
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