发明名称 |
Voltage controlled oscillator using dual gated asymmetrical FET devices |
摘要 |
A ring oscillator is formed using inverting stages configured from asymmetrical dual gated FET (ADG-FET) devices. The simplest form uses an odd number of CMOS inverter stages configured with an ADG-PFET and an ADG-NFET. The front gates are used as the logic inputs and are coupled to preceeding outputs from the main ring. The back gates of the ADG-PFET devices are coupled to a first control voltage and the back gates of the ADG-NFET devices are coupled to a second control voltage that is the complement of the first control voltage referenced to an off-set voltage. Other configurations of logic inverting stages using ADG-FET devices may also be used. The control voltage is varied to modulate the current level set by the logic state at the inputs coupled to the front gates.
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申请公布号 |
US2007040621(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20050204412 |
申请日期 |
2005.08.16 |
申请人 |
NGO HUNG C;CHUANG CHING-TE;KIM KEUNWOO;KUANG JENTE B;NOWKA KEVIN J |
发明人 |
NGO HUNG C.;CHUANG CHING-TE;KIM KEUNWOO;KUANG JENTE B.;NOWKA KEVIN J. |
分类号 |
H03K3/03 |
主分类号 |
H03K3/03 |
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地址 |
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