发明名称 |
Semiconductor laser diode with current restricting layer and fabrication method thereof |
摘要 |
Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
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申请公布号 |
US2007041413(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20060580093 |
申请日期 |
2006.10.13 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KWAK JOON-SEOP;HA KYOUNG-HO;SUNG YOUN-JOON |
分类号 |
H01S5/00;H01S5/20;H01S5/22;H01S5/223;H01S5/30;H01S5/323 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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