IMAGE SENSOR PIXEL AND METHOD OF FABRICATING THE SAME

摘要

A new structure of a photodiode of a pixel in CMOS image sensor and a method of fabricating the same are provided. The photodiode is fabricated by using one photo mask, so that the number of masks decreases and the fabrication processes are simplified. In addition, two conducting layers constituting a photodiode are self-aligned, so that a fabrication process for connecting the photodiode and a transfer transistor is not required. Accordingly, a problem of channeling generated in a lower portion of a gate of the transfer transistor can be solved, so that an improved pixel can be fabricated.