发明名称 SURFACE ACOUSTIC WAVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin surface acoustic wave element, a highly reliable surface acoustic wave element which can be easily packaged and attain low cost, and a manufacturing method thereof. <P>SOLUTION: In the surface acoustic wave element 10, an interdigital transducer (ITD) 80 is formed on the surface of an active surface side of a semiconductor substrate 20. The element is provided with a plurality of insulation layers 41-45 stacked and formed on the surface of the semiconductor substrate 20, a recess 75 drilled on the substantial center of the surface of the insulation layers 41-45, a passivation film 60 formed at least on the bottom surface 76 of the recess 75, a piezoelectric layer 70 formed on the surface of the passivation film 60, the IDT 80 formed on the surface of the piezoelectric layer 70 in the bottom surface 76 of the recess 75, and connection electrode 65, 66 for connection with an external circuit formed on the external periphery of the surface of the surface acoustic wave element 10. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007049261(A) 申请公布日期 2007.02.22
申请号 JP20050229145 申请日期 2005.08.08
申请人 SEIKO EPSON CORP 发明人 YAJIMA ARITSUGU;SATO HISAKATSU
分类号 H03H3/08;H01L41/09;H01L41/187;H01L41/22;H01L41/23;H01L41/29;H01L41/311;H03H9/25 主分类号 H03H3/08
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