| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-purity silicon carbide wafer that can be detected by an optical sensor. SOLUTION: The silicon carbide (SiC) wafer 32 has a four-layer structure consisting of a first SiC film 34 to a fourth SiC film 40. These SiC films 34 to 40 are overlaid one after another through four cycles of a CVD process. In each SiC film, crystal grains become larger gradually from the lower side to the upper side of the film. COPYRIGHT: (C)2007,JPO&INPIT
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