发明名称 Method for manufacturing semiconductor device using immersion lithography process
摘要 Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising rapidly accelerating the rotation of a wafer after exposing and before developing steps to remove an immersion lithography solution, thereby effectively reducing water mark defects.
申请公布号 US2007042298(A1) 申请公布日期 2007.02.22
申请号 US20060481299 申请日期 2006.07.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG JAE C.;LEE SUNG K.;BAN KEUN D.;BOK CHEOL K.;MOON SEUNG C.
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项
地址