发明名称 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
摘要 The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
申请公布号 US2007041419(A1) 申请公布日期 2007.02.22
申请号 US20050209994 申请日期 2005.08.22
申请人 TAN MICHAEL R T;CORZINE SCOTT W;BOUR DAVID P 发明人 TAN MICHAEL R.T.;CORZINE SCOTT W.;BOUR DAVID P.
分类号 H01S3/083 主分类号 H01S3/083
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