发明名称 INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME
摘要 <p>An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.</p>
申请公布号 WO2007021030(A1) 申请公布日期 2007.02.22
申请号 WO2006JP316444 申请日期 2006.08.16
申请人 MATSUSHITA ELECTRIC WORKS, LTD.;YAMANAKA, HIROSHI;ICHIHARA, TSUTOMU;WATABE, YOSHIFUMI;TSUJI, KOJI;KIRIHARA, MASAO;YOSHIHARA, TAKAAKI;NISHIJIMA, YOICHI;HYODO, SATOSHI 发明人 YAMANAKA, HIROSHI;ICHIHARA, TSUTOMU;WATABE, YOSHIFUMI;TSUJI, KOJI;KIRIHARA, MASAO;YOSHIHARA, TAKAAKI;NISHIJIMA, YOICHI;HYODO, SATOSHI
分类号 G01J5/20;H01L27/146 主分类号 G01J5/20
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