| 摘要 |
A doped silicon block or island, formed above a drain electrode (17) in substrate (11) of a die or chip, has a height corresponding to the desired length of a channel (21, 23, 25). A source electrode (27) is formed above the silicon island and allows for contact (41) from above. Contact (43) from above may also be made with an L-shaped control gate (33, 35) and with the subsurface drain. A horizontal array of contacts for source, gate and drain is formed for the vertical transistor that is built. If nanocrystals (31) are incorporated into a layer (29) between the gate and the channel, a non-volatile floating gate transistor may be formed. Without the layer of nanocrystals, an MOS or CMOS transistor is formed.
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