PROGRAMMABLE MATRIX ARRAY WITH CHALCOGENIDE MATERIAL

摘要

A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines (X) and (Y) in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer (300) in series with the phase-change material (200) and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.