| 摘要 |
A novel silicon-base thermoelectric transducing material containing a P- or N-type semiconductor obtained by adding various impurities to Si, which is produced with good productivity at low cost and has a stable quality and a high performance index. Generally when various elements are added to Si, the Seebeck coefficient of the material decreases with the carrier concentration until the carrier concentration exceeds 10<18> M/m<3>, and a minimum value of the Seebeck coefficient is in a range from 10<18> to 10<19> M/m<3>. The material of the invention is a P- or N-type semiconductor having a carrier concentration of 10<17> to 10<20> M/m<3> and containing Si and 0.001 to 0.5 atomic % of one or more elements of Be, Mg, Ca, Sr, Ba Zn, Cd, Hg, B, Al, Ga, In, and Tl, or one or more elements of N, P, As, Sb, Bi, O, S, Se, and Te, and another material is a P- or N-type semiconductor having a carrier concentration of 10<19> to 10<21> M/m<3> and containing Si and 0.5 to 10 atomic % of one or more of the elements. <IMAGE> |
