SILICON WAFER, PROCESS FOR PRODUCING THE SAME AND METHOD OF GROWING SILICON SINGLE CRYSTAL

摘要

In the present invention, when growing a silicon single crystal free of grown-in defects by the CZ method, the crystal is pulled out at or in a vicinity of a critical pulling rate at which a ring-shaped OSF occurrence region vanishes in a center portion of the crystal by using a hot zone structure in which a temperature gradient Gc in a center portion of the crystal is equal to or greater than a temperature gradient Ge in a peripheral portion of the crystal, while supplying an inert gas including hydrogen to an interior of a pulling furnace. By means of the present invention, the critical pulling rate at which the ring-shaped OSF occurrence region vanishes in the center portion of the crystal is increased, and single crystals free of grown-in defects in which dislocation clusters and COPs do not exist over the entire crystal radial direction in the as-grown state, can be grown by pulling at a pulling rate higher than that in the prior art.