发明名称 |
III GROUP NITRIDE CRYSTAL AND METHOD FOR PREPARATION THEREOF, AND III GROUP NITRIDE CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE |
摘要 |
<p>A method of manufacturing a group III-nitride crystal includes the steps of: preparing a seed crystal (10), and growing a first group III-nitride crystal (21) on the seed crystal (10) by liquid phase method; wherein in the step of growing a first group III-nitride crystal (21) on the seed crystal (10), rate of crystal growth V H in a direction parallel to a main surface (10h) of the seed crystal (10) is higher than rate of crystal growth V V in a direction vertical to the main surface (10h) of the seed crystal (10). By the manufacturing method, a group III-nitride crystal is obtained, of which dislocation density of a surface parallel to the main surface (10h) of the seed crystal (10) is as low as at most 5 × 10 6 /cm 2 .</p> |
申请公布号 |
EP1754811(A1) |
申请公布日期 |
2007.02.21 |
申请号 |
EP20050730635 |
申请日期 |
2005.04.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SASAKI, TAKATOMO |
发明人 |
SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI;KAWAMURA, FUMIO;NAKAHATA, SEIJI;HIROTA, RYU |
分类号 |
C30B29/38;C30B9/00;C30B9/10;C30B11/00;C30B11/06;C30B29/40;H01L33/16;H01L33/32 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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