| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type gallium nitride compound semiconductor formed of a gallium nitride compound semiconductor layer doped with a p-type impurity. <P>SOLUTION: The gallium nitride compound semiconductor comprises: an n-type gallium nitride compound semiconductor layer containing at least silicon; and a p-type gallium nitride compound semiconductor layer containing at least magnesium. The semiconductor further comprises: a cap layer which can uniformly retrieve at least a partial hydrogen dissociated from magnesium from the gallium nitride compound semiconductor layer suppressing the dissociation of a gallium nitride compound semiconductor in annealing and containing the magnesium in the depth direction and which has a film thickness of 0.01 μm on the gallium nitride compound semiconductor layer containing the magnesium. <P>COPYRIGHT: (C)2004,JPO |
