发明名称 |
THIN-FILM PIEZOELECTRIC DEVICE |
摘要 |
There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16. <IMAGE> |
申请公布号 |
EP1152475(A4) |
申请公布日期 |
2007.02.21 |
申请号 |
EP20000921111 |
申请日期 |
2000.05.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MISU, KOICHIRO;YOSHIDA, KENJI;IBATA, KOJI;WADAKA, SHUSOU;NAGATSUKA, TSUTOMU;UCHIKAWA, FUSAOKI;YAMADA, AKIRA;MAEDA, CHISAKO |
分类号 |
H03H3/04;H03H9/02;H03H9/17 |
主分类号 |
H03H3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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