| 发明名称 |
TUNNELING NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME |
| 摘要 |
<p>A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.</p> |
| 申请公布号 |
EP1754262(A2) |
申请公布日期 |
2007.02.21 |
| 申请号 |
EP20050856753 |
申请日期 |
2005.05.24 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;FORSCHUNGSZENTRUM JUELICH GMBH |
发明人 |
APPENZELLER, JOERG;KNOCH, JOACHIM |
| 分类号 |
H01L51/10;H01L29/06;H01L29/739;H01L29/80;H01L29/88;H01L51/00;H01L51/30 |
主分类号 |
H01L51/10 |
| 代理机构 |
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