发明名称 |
Method for preventing contamination during the fabrication of a semiconductor device |
摘要 |
<p>Immediately after a Si/SiGe film containing a contaminant is formed over all surfaces of a substrate by epitaxial growth, a portion of the Si/SiGe film formed to the back surface side of the substrate is removed by wet etching. In addition, the Si/SiGe film is subjected to processing with heating in a container, after which a dummy run is carried out in the container. These processings prevent secondary wafer contamination through a stage, a robot arm or a vacuum wand for handling a wafer and the contamination of the container also used in the fabrication process of a semiconductor device free from any group IV element but Si.
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申请公布号 |
EP1605076(A9) |
申请公布日期 |
2007.02.21 |
申请号 |
EP20050018537 |
申请日期 |
2003.03.31 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NOTAKE, HIDENORI;OHNISHI, TERUHITO;ASAI, AKIRA;AOKI, SHIGETAKA |
分类号 |
H01L21/66;C23C16/01;C23C16/44;C23C16/56;H01L21/02;H01L21/20;H01L21/205;H01L21/306;H01L21/308;H01L21/3213;H01L21/331;H01L29/10;H01L29/732;H01L29/737;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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