发明名称 |
Semiconductor device including storage node and method of manufacturing the same |
摘要 |
A semiconductor device including storage nodes and a method of manufacturing the same: The method includes forming an insulating layer and an etch stop layer on a semiconductor substrate; forming storage node contact bodies to be electrically connected to the semiconductor substrate by penetrating the insulating layer and the etch stop layer; forming landing pads on the etch stop layer to be electrically connected to the storage node contact bodies, respectively; and forming storage nodes on the landing pads, respectively, the storage nodes of which outward sidewalls are completely exposed and which are arranged at an angle to each other.
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申请公布号 |
US7180118(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20040830895 |
申请日期 |
2004.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO CHANG-HYUN;CHUNG TAE-YOUNG;YUN CHEOL-JU;LEE JAE-GOO;LEE JU-YONG |
分类号 |
H01L27/108;H01L21/02;H01L21/20;H01L21/8242;H01L27/02;H01L29/76;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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