发明名称 |
Transistor with high dielectric constant gate and method for forming the same |
摘要 |
A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.
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申请公布号 |
US7179701(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20040946494 |
申请日期 |
2004.09.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HSU JU-WANG;SHIEH JYU-HORNG;CHIANG JU-CHIEN |
分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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