发明名称 Semiconductor memory device with a page mode
摘要 A sense amplifier and a latch for sense data output the former 4 words of sense data to a latch for page data, and during a page mode reading period of the former 4 words of data as external data by the latch for page data, a selector circuit and an output buffer, perform a sense amplifying operation and a latch operation on the latter 4 words of memory cell information output from a Y gate under control of a sense signal and a latch signal.
申请公布号 US7180824(B2) 申请公布日期 2007.02.20
申请号 US20050072274 申请日期 2005.03.07
申请人 RENESAS TECHNOLOGY CORP. 发明人 KUBO TAKASHI
分类号 G11C7/10;G11C11/401;G11C5/00;G11C7/00;G11C8/18;G11C29/00 主分类号 G11C7/10
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