Flat-type capacitor for integrated circuit and method of manufacturing the same

摘要

Embodiments of the invention provide flat-type capacitors that prevent degradation of the dielectric layer, thereby improving the electrical properties of the capacitor. The capacitor includes a lower interconnection formed in a predetermined portion of a semiconductor substrate, a lower electrode formed on the lower interconnection that is electrically coupled to the lower interconnection; a concave dielectric layer formed on the lower electrode; a concave upper electrode formed on the dielectric layer; a first upper interconnection that is electrically coupled to the lower interconnection; and a second upper interconnection that is coupled to the upper electrode. The concave upper electrode is larger than the lower electrode.