发明名称 Heat treatment apparatus and method of manufacturing a semiconductor device
摘要 A heat treatment apparatus which enables a heating process for a short time with high reproducibility in a manufacturing process of a MOS transistor manufactured using a semiconductor substrate, and a method of manufacturing a semiconductor device using the heat treatment apparatus are provided. The heat treatment apparatus of the present invention which enables the above heat treatment method is characterized by comprising: a light source; a power supply for turning the light source on and off in a pulse shape; a processing chamber in which the substrate can be irradiated with light from the light source; and a unit for supplying a coolant to the processing chamber and also increasing and decreasing the supply amount.
申请公布号 US7179729(B2) 申请公布日期 2007.02.20
申请号 US20010001197 申请日期 2001.12.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 DAIRIKI KOJI;YAMAZAKI SHUNPEI
分类号 H01L21/26;H01L21/28;H01L21/00;H01L21/265;H01L21/268;H01L21/3205;H01L21/324;H01L21/336;H01L21/425;H01L21/8238;H01L23/52;H01L27/092 主分类号 H01L21/26
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