发明名称 |
Heat treatment apparatus and method of manufacturing a semiconductor device |
摘要 |
A heat treatment apparatus which enables a heating process for a short time with high reproducibility in a manufacturing process of a MOS transistor manufactured using a semiconductor substrate, and a method of manufacturing a semiconductor device using the heat treatment apparatus are provided. The heat treatment apparatus of the present invention which enables the above heat treatment method is characterized by comprising: a light source; a power supply for turning the light source on and off in a pulse shape; a processing chamber in which the substrate can be irradiated with light from the light source; and a unit for supplying a coolant to the processing chamber and also increasing and decreasing the supply amount.
|
申请公布号 |
US7179729(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20010001197 |
申请日期 |
2001.12.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
DAIRIKI KOJI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/26;H01L21/28;H01L21/00;H01L21/265;H01L21/268;H01L21/3205;H01L21/324;H01L21/336;H01L21/425;H01L21/8238;H01L23/52;H01L27/092 |
主分类号 |
H01L21/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|