Semiconductor memory device informing internal voltage level using ready/busy pin

摘要

A semiconductor memory device has a ready/busy pin for detecting a current state of the device. The memory device includes a voltage level detector, a ready/busy driver controller, and a ready/busy driver. The voltage level detector checks if the internal voltage level has reached a predetermined level, and then generates a power-up signal. The ready/busy driver controller generates a busy enable signal in response to the power-up signal. The ready/busy driver provides the busy enable signal to a ready/busy pin by which it is informed that the memory device is in a busy state.