| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device includes a silicon substrate having a film thickness smaller than a maximum range of a particle generated by a nuclear reaction between a fast neutron and a silicon atom, and a semiconductor element formed on a surface of the silicon substrate. |
| 申请公布号 |
US7180114(B2) |
申请公布日期 |
2007.02.20 |
| 申请号 |
US20040874306 |
申请日期 |
2004.06.24 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAMURA MITSUTOSHI;AMAKAWA HIROTAKA |
| 分类号 |
H01L23/50;H01L23/556;H01L21/00;H01L21/02;H01L21/8242;H01L21/8244;H01L23/495;H01L23/552;H01L27/10;H01L27/108;H01L27/11;H01L29/06;H01L31/00 |
主分类号 |
H01L23/50 |
| 代理机构 |
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代理人 |
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