| 摘要 |
An apparatus comprising an insulating substrate ( 101 ) having first and second surfaces ( 101 a , 101 b) and a plurality of metal-filled vias ( 102 ) extending from the first to the second surface. The first and second surfaces have contact pads ( 103, 104 ), each one comprising a connector stack to at least one of the vias. The stack comprises a seed metal layer ( 110 , copper) in contact with the via metal capable of providing an adhesive and conductive layer for electroplating on its surface, a first electroplated support layer ( 111 a, copper) secured to the seed metal layer, a second electroplated support layer ( 111 b, nickel), and at least one reflow metal bonding layer ( 112 , palladium, gold) on the second support layer. The electrolytic plating process produces support layers substantially pure (at least 99.0%), free of unwanted additives such as phosphorus or boron, and exhibiting closely controlled grain sizes. Reflow metal connectors ( 220, 230 ) provide attachment to chip contact pads and external parts.
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