发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME
摘要 <p>Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4μm.</p>
申请公布号 KR100684704(B1) 申请公布日期 2007.02.20
申请号 KR20050112716 申请日期 2005.11.24
申请人 发明人
分类号 H01L27/105 主分类号 H01L27/105
代理机构 代理人
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