发明名称 Polycrystalline structure film and method of making the same
摘要 First magnetic crystalline grains are located at spaced positions on the surface of a base layer in a polycrystalline structure film. Magnetic interaction can reliably be prevented between the adjacent first magnetic crystalline grains. An amorphous material or a non-magnetic material covers over the first magnetic crystalline grains. An orientation controlling layer covering over the first magnetic crystalline grains and the amorphous or non-magnetic material on the base layer. Second magnetic crystalline grains are located at spaced locations on the surface of the orientation controlling layer. The orientation controlling layer serves to set the orientation in a predetermined direction in the second magnetic crystalline grains. Since the orientation of the magnetic crystalline grains can be aligned in a predetermined direction, the magnetic field of a sufficient intensity can be leaked out of the polycrystalline structure film.
申请公布号 US7179548(B2) 申请公布日期 2007.02.20
申请号 US20040007129 申请日期 2004.12.08
申请人 FUJITSU LIMITED 发明人 MUKAI RYOICHI
分类号 G11B5/66;G11B5/65;G11B5/70;G11B5/73;G11B5/738;G11B5/84;G11B5/851;H01F10/00;H01F10/14 主分类号 G11B5/66
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