发明名称 Method for testing semiconductor memory device and test circuit for semiconductor memory device
摘要 In synchronization with a PLL clock PCK having a frequency four times that of an external clock ECK, n number of internal addresses IAD including an external address EAD are generated and, in synchronization with the PLL clock PCK, n bits of internal write data ITD are generated to be written into a RAM macro 12 . Thereafter, the external address EAD is latched, n number of the internal addresses IAD including the external address EAD are generated in synchronization with the PLL clock PCK, n bits of internal read data ITQ corresponding to n number of the internal addresses IAD are read from the RAM macro 12 in synchronization with the PLL clock PCK and the internal read data ITQ corresponding to the internal address IAD which coincides with a latch address LAD among n number of the internal addresses IAD is outputted.
申请公布号 US7181658(B2) 申请公布日期 2007.02.20
申请号 US20030723278 申请日期 2003.11.24
申请人 NEC ELECTRONICS CORPORATION 发明人 ITO MUNEHIRO
分类号 G01R31/28;G11C29/00;G01R31/3183;G11C29/14;G11C29/34;G11C29/56 主分类号 G01R31/28
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