发明名称 |
Integrated semiconductor memory comprising at least one word line and comprising a multiplicity of memory cells |
摘要 |
An integrated semiconductor memory includes at least one word line and a number of memory cells. Each memory cell has a selection transistor coupled to the word line. A word line driver is coupled to the word line. The word line driver provides a first electrical potential or a second electrical potential to the word line such that the word line is activated by the first electrical potential and is deactivated by the second electrical potential. A passive component (e.g., a diode or a resistor) is coupled between the word line and the second electrical potential such that the word line is coupled to the second electrical potential in a high-resistance fashion through the passive component. The passive component is transmissive for a leakage current between the word line and the contact connection.
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申请公布号 |
US7180820(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20050140554 |
申请日期 |
2005.05.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KLIEWER JOERG;BENZINGER HERBERT;PROELL MANFRED;SCHROEDER STEPHAN |
分类号 |
G11C8/00;G11C8/08;G11C11/407;G11C11/408;G11C29/00;G11C29/02;H01L21/8242;H01L27/108 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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