| 摘要 |
In a method of forming contact holes without using a vacuum device, a resist film at positions corresponding to contact hole forming regions above a source region 16 , a drain region 18 and a gate electrode 34 of a polysilicon film 14 , is exposed and developed to form mask pillars 40 . Then a liquid insulating material is applied onto the whole surface of a glass substrate 10 except for the mask pillars 40 , to form an insulating layer 42 . Next the mask pillars 40 are removed by ashing, and an insulating layer 42 , second contact holes 44 and first contact holes 28 which pass through a gate insulating film 26 are formed.
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