发明名称 Powergating method and apparatus
摘要 A powergating circuit includes a P-channel transistor with a source coupled to VCC, a gate for receiving a first boosted or non-boosted powergating control signal, and a drain forming the internal switched VCC power supply. An N-channel transistor has a source coupled to VSS, a gate for receiving a second boosted or non-boosted powergating control signal, and a drain forming the internal switched VSS power supply. The powergating circuit further includes a circuit for forcing the first and second internal power supply voltages to a mid-point reference voltage during the standby mode.
申请公布号 US7180363(B2) 申请公布日期 2007.02.20
申请号 US20040900505 申请日期 2004.07.28
申请人 SONY CORPORATION 发明人 PARRIS MICHAEL C.;HARDEE KIM C.
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
代理机构 代理人
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