Methods of forming capacitors with high dielectric layers and capacitors so formed

摘要

Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti_1-xSn_x)O₃ (BTS) or Ba(Ti_1-xZr_x)O₃ (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.