| 摘要 |
A method of driving a semiconductor switching element includes applying a drive signal configured to switch the semiconductor element such that a change in the charge stored on the drive electrode occurs over time, the drive signal having one or more predetermined parameters that define a time profile of the drive signal. The method also includes determining a deviation between an ideal switching instant of the semiconductor switching element and an actual switching instant of the semiconductor switching element, the ideal switching instant defined in reference to the time profile of the drive signal and/or a signal having a characteristic that is dependent on the time profile of the drive signal. The method further includes changing at least one of the predetermined parameters of the drive signal for a next switching operation based on the determined deviation.
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