PHOTORESIST STRIPPER COMPOSITION FOR SEMICONDUCTOR MANUFACTURING

摘要

A photoresist stripper composition for manufacturing semiconductor device is provided to easily remove cured or modified photoresist film at low temperature and minimize corrosion of a metal wiring in lower part of photoresist resin by comprising hydrazine hydrate and anti-corrosion agent based on imidazoline, sulfide or sulfoxide derivatives or aromatic compounds. The composition comprises: 3 to 20wt.% of hydrazine hydrate; 20 to 40wt.% of polar solvent; 0.01 to 3wt.% of anti-corrosion agent selected from imidazoline, sulfide or sulfoxide derivatives or aromatic compounds; 0.01 to 5wt.% of monoalcohol compound having C2 to C10; and 40 to 70wt.% of deionized water. The polar solvent is selected from N-methylpyrrolidone(NMP), dimethyl sulfoxide(DMSO) and dimethylacetamide(DMAc). The monoalcohol compound is selected from ethanol, propanol, isopropanol, butanol, heptanol, octanol, decanol, isohexanol, isooctanol and benzylalcohol. The composition further includes 0.01 to 3wt.% of ammonium based compound to total weight of the composition.